Origin of frequency and voltage dependent negative dielectric properties in the Al/p-Si Schottky diodes with (Cd0.3Zn0.7O) interfacial layer in the wide range of frequency and voltage

The real and imaginary parts of complex-dielectric (ε′ , ε’’) and electric-modulus (M′ , M′′), dielectric loss tangent (tanδ), and conductivity (σ) values of Al/(Cd0.3Zn0.7O)/p-Si Schottky Diode (SD) were obtained from capacitance/conductance vs. voltage/frequency (C/G-V-f) plots. Negative dielectric (ND) was observed under 50 kHz at about 3.5 V and the increase in the ε’’ results from a drop in ND with increasing voltage, also known as inductive behavior. The rise in σac at high frequencies causes the eddy-current to grow, which in turn causes the ε” or tanδ to increase. While the relaxation process causes the value of M′ to decrease with increasing voltage, M′′-V graphs reveal a peak at roughly 0.0V for each frequency. The obtained value of ε′ for Al/(Cd0.3Zn0.7O)/p-Si at 500 Hz is about 25 times higher than those using traditional SiO2 as an interfacial layer, and so it can be successfully used for more charge or energy storage.

Süresiz Ambargo
Görüntülenme
16
15.09.2023 tarihinden bu yana
İndirme
1
15.09.2023 tarihinden bu yana
Son Erişim Tarihi
11 Temmuz 2024 00:38
Google Kontrol
Tıklayınız
Tam Metin
Süresiz Ambargo
Detaylı Görünüm
Eser Adı
(dc.title)
Origin of frequency and voltage dependent negative dielectric properties in the Al/p-Si Schottky diodes with (Cd0.3Zn0.7O) interfacial layer in the wide range of frequency and voltage
Yazar
(dc.contributor.author)
İlke Taşçıoğlu
Yayın Yılı
(dc.date.issued)
2023
Tür
(dc.type)
Makale
Özet
(dc.description.abstract)
The real and imaginary parts of complex-dielectric (ε′ , ε’’) and electric-modulus (M′ , M′′), dielectric loss tangent (tanδ), and conductivity (σ) values of Al/(Cd0.3Zn0.7O)/p-Si Schottky Diode (SD) were obtained from capacitance/conductance vs. voltage/frequency (C/G-V-f) plots. Negative dielectric (ND) was observed under 50 kHz at about 3.5 V and the increase in the ε’’ results from a drop in ND with increasing voltage, also known as inductive behavior. The rise in σac at high frequencies causes the eddy-current to grow, which in turn causes the ε” or tanδ to increase. While the relaxation process causes the value of M′ to decrease with increasing voltage, M′′-V graphs reveal a peak at roughly 0.0V for each frequency. The obtained value of ε′ for Al/(Cd0.3Zn0.7O)/p-Si at 500 Hz is about 25 times higher than those using traditional SiO2 as an interfacial layer, and so it can be successfully used for more charge or energy storage.
Açık Erişim Tarihi
(dc.date.available)
2023-05-31
Yayıncı
(dc.publisher)
ELSEVIER
Dil
(dc.language.iso)
En
Konu Başlıkları
(dc.subject)
Interface states and series resistance
Konu Başlıkları
(dc.subject)
Al/(Cd0.3Zn0.7O)/p-Si (MIS) Schottky diodes
Konu Başlıkları
(dc.subject)
Negative dielectric
Konu Başlıkları
(dc.subject)
Inductive behavior
Konu Başlıkları
(dc.subject)
Electric modulus and ac conductivity
Tek Biçim Adres
(dc.identifier.uri)
https://hdl.handle.net/20.500.14081/1911
ISSN
(dc.identifier.issn)
0921-4526
Dergi
(dc.relation.journal)
PHYSICA B-CONDENSED MATTER
Esere Katkı Sağlayan
(dc.contributor.other)
Nuray Delen
Esere Katkı Sağlayan
(dc.contributor.other)
Seçkin Altındal Yerişkin
Esere Katkı Sağlayan
(dc.contributor.other)
Arif Özbay
DOI
(dc.identifier.doi)
10.1016/j.physb.2023.415031
Orcid
(dc.identifier.orcid)
0000-0001-9563-4396
Bitiş Sayfası
(dc.identifier.endpage)
9
Başlangıç Sayfası
(dc.identifier.startpage)
1
Dergi Cilt
(dc.identifier.volume)
665
wosquality
(dc.identifier.wosquality)
Q3
wosauthorid
(dc.contributor.wosauthorid)
JDL-6784-2023
Department
(dc.contributor.department)
Elektrik Elektronik
Wos No
(dc.identifier.wos)
WOS:001055544100001
Veritabanları
(dc.source.platform)
Wos
Veritabanları
(dc.source.platform)
Scopus
Analizler
Yayın Görüntülenme
Yayın Görüntülenme
Erişilen ülkeler
Erişilen şehirler
6698 sayılı Kişisel Verilerin Korunması Kanunu kapsamında yükümlülüklerimiz ve çerez politikamız hakkında bilgi sahibi olmak için alttaki bağlantıyı kullanabilirsiniz.
Tamam

creativecommons
Bu site altında yer alan tüm kaynaklar Creative Commons Alıntı-GayriTicari-Türetilemez 4.0 Uluslararası Lisansı ile lisanslanmıştır.
Platforms