Origin of frequency and voltage dependent negative dielectric properties in the Al/p-Si Schottky diodes with (Cd0.3Zn0.7O) interfacial layer in the wide range of frequency and voltage
The real and imaginary parts of complex-dielectric (ε′ , ε’’) and electric-modulus (M′ , M′′), dielectric loss tangent (tanδ), and conductivity (σ) values of Al/(Cd0.3Zn0.7O)/p-Si Schottky Diode (SD) were obtained from capacitance/conductance vs. voltage/frequency (C/G-V-f) plots. Negative dielectric (ND) was observed under 50 kHz at about 3.5 V and the increase in the ε’’ results from a drop in ND with increasing voltage, also known as inductive behavior. The rise in σac at high frequencies causes the eddy-current to grow, which in turn causes the ε” or tanδ to increase. While the relaxation process causes the value of M′ to decrease with increasing voltage, M′′-V graphs reveal a peak at roughly 0.0V for each frequency. The obtained value of ε′ for Al/(Cd0.3Zn0.7O)/p-Si at 500 Hz is about 25 times higher than those using traditional SiO2 as an interfacial layer, and so it can be successfully used for more charge or energy storage.
| Yazar |
İlke Taşçıoğlu |
| Yayın Türü | Makale |
| Tek Biçim Adres | https://hdl.handle.net/20.500.14081/1911 |
| Konu Başlıkları |
Interface states and series resistance
Al/(Cd0.3Zn0.7O)/p-Si (MIS) Schottky diodes Negative dielectric Inductive behavior Electric modulus and ac conductivity |
| Koleksiyonlar |
Fakülteler Mühendislik Fakültesi |
| Dergi | PHYSICA B-CONDENSED MATTER |
| Dergi Cilt | 665 |
| Sayfalar | 1 - 9 |
| Yayın Yılı | 2023 |
| Eser Adı [dc.title] | Origin of frequency and voltage dependent negative dielectric properties in the Al/p-Si Schottky diodes with (Cd0.3Zn0.7O) interfacial layer in the wide range of frequency and voltage |
| Yazar [dc.contributor.author] | İlke Taşçıoğlu |
| Yayın Yılı [dc.date.issued] | 2023 |
| Yayın Türü [dc.type] | Makale |
| Özet [dc.description.abstract] | The real and imaginary parts of complex-dielectric (ε′ , ε’’) and electric-modulus (M′ , M′′), dielectric loss tangent (tanδ), and conductivity (σ) values of Al/(Cd0.3Zn0.7O)/p-Si Schottky Diode (SD) were obtained from capacitance/conductance vs. voltage/frequency (C/G-V-f) plots. Negative dielectric (ND) was observed under 50 kHz at about 3.5 V and the increase in the ε’’ results from a drop in ND with increasing voltage, also known as inductive behavior. The rise in σac at high frequencies causes the eddy-current to grow, which in turn causes the ε” or tanδ to increase. While the relaxation process causes the value of M′ to decrease with increasing voltage, M′′-V graphs reveal a peak at roughly 0.0V for each frequency. The obtained value of ε′ for Al/(Cd0.3Zn0.7O)/p-Si at 500 Hz is about 25 times higher than those using traditional SiO2 as an interfacial layer, and so it can be successfully used for more charge or energy storage. |
| Açık Erişim Tarihi [dc.date.available] | 2023-05-31 |
| Yayıncı [dc.publisher] | ELSEVIER |
| Dil [dc.language.iso] | İngilizce |
| Konu Başlıkları [dc.subject] | Interface states and series resistance |
| Konu Başlıkları [dc.subject] | Al/(Cd0.3Zn0.7O)/p-Si (MIS) Schottky diodes |
| Konu Başlıkları [dc.subject] | Negative dielectric |
| Konu Başlıkları [dc.subject] | Inductive behavior |
| Konu Başlıkları [dc.subject] | Electric modulus and ac conductivity |
| Tek Biçim Adres [dc.identifier.uri] | https://hdl.handle.net/20.500.14081/1911 |
| ISSN [dc.identifier.issn] | 0921-4526 |
| Dergi [dc.relation.journal] | PHYSICA B-CONDENSED MATTER |
| Esere Katkı Sağlayan [dc.contributor.other] | Nuray Delen |
| Esere Katkı Sağlayan [dc.contributor.other] | Seçkin Altındal Yerişkin |
| Esere Katkı Sağlayan [dc.contributor.other] | Arif Özbay |
| DOI [dc.identifier.doi] | 10.1016/j.physb.2023.415031 |
| Orcid [dc.identifier.orcid] | 0000-0001-9563-4396 |
| Bitiş Sayfası [dc.identifier.endpage] | 9 |
| Başlangıç Sayfası [dc.identifier.startpage] | 1 |
| Dergi Cilt [dc.identifier.volume] | 665 |
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