Examination on the current conduction mechanisms of Au/n-Si diodes with ZnO-PVP and ZnO/Ag2WO4 -PVP interfacial layers

İlke Taşçıoğlu

This study reports a comparative characterization of Au/n-Si Schottky diodes/contacts (SDs) with hydrothermally synthesized ZnO-PVP and ZnO/Ag2WO4-PVP interfacial layers, which outperforms conventional metal-semiconductor Schottky diode structures. This characterization is important because these structures outperform traditional metal-semiconductor Schottky diodes due to the presence of an interfacial layer, allowing barrier height control, surface passivation, and leakage current reduction. Based on the thermionic emission (TE) theory assumed to be the dominant current mechanism across, SDs ...Daha fazlası