The real and imaginary parts of complex-dielectric (ε′ , ε’’) and electric-modulus (M′ , M′′), dielectric loss tangent (tanδ), and conductivity (σ) values of Al/(Cd0.3Zn0.7O)/p-Si Schottky Diode (SD) were obtained from capacitance/conductance vs. voltage/frequency (C/G-V-f) plots. Negative dielectric (ND) was observed under 50 kHz at about 3.5 V and the increase in the ε’’ results from a drop in ND with increasing voltage, also known as inductive behavior. The rise in σac at high frequencies causes the eddy-current to grow, which in turn causes the ε” or tanδ to increase. While the relaxation process causes the value of M′ to decrease with increasing voltage, M′′-V graphs reveal a peak at roughly 0.0V for each frequency. The obtained value of ε′ for Al/(Cd0.3Zn0.7O)/p-Si at 500 Hz is about 25 times higher than those using traditional SiO2 as an interfacial layer, and so it can be successfully used for more charge or energy storage.
Eser Adı (dc.title) | Origin of frequency and voltage dependent negative dielectric properties in the Al/p-Si Schottky diodes with (Cd0.3Zn0.7O) interfacial layer in the wide range of frequency and voltage |
Yazar (dc.contributor.author) | İlke Taşçıoğlu |
Yayın Yılı (dc.date.issued) | 2023 |
Tür (dc.type) | Makale |
Özet (dc.description.abstract) | The real and imaginary parts of complex-dielectric (ε′ , ε’’) and electric-modulus (M′ , M′′), dielectric loss tangent (tanδ), and conductivity (σ) values of Al/(Cd0.3Zn0.7O)/p-Si Schottky Diode (SD) were obtained from capacitance/conductance vs. voltage/frequency (C/G-V-f) plots. Negative dielectric (ND) was observed under 50 kHz at about 3.5 V and the increase in the ε’’ results from a drop in ND with increasing voltage, also known as inductive behavior. The rise in σac at high frequencies causes the eddy-current to grow, which in turn causes the ε” or tanδ to increase. While the relaxation process causes the value of M′ to decrease with increasing voltage, M′′-V graphs reveal a peak at roughly 0.0V for each frequency. The obtained value of ε′ for Al/(Cd0.3Zn0.7O)/p-Si at 500 Hz is about 25 times higher than those using traditional SiO2 as an interfacial layer, and so it can be successfully used for more charge or energy storage. |
Açık Erişim Tarihi (dc.date.available) | 2023-05-31 |
Yayıncı (dc.publisher) | ELSEVIER |
Dil (dc.language.iso) | En |
Konu Başlıkları (dc.subject) | Interface states and series resistance |
Konu Başlıkları (dc.subject) | Al/(Cd0.3Zn0.7O)/p-Si (MIS) Schottky diodes |
Konu Başlıkları (dc.subject) | Negative dielectric |
Konu Başlıkları (dc.subject) | Inductive behavior |
Konu Başlıkları (dc.subject) | Electric modulus and ac conductivity |
Tek Biçim Adres (dc.identifier.uri) | https://hdl.handle.net/20.500.14081/1911 |
ISSN (dc.identifier.issn) | 0921-4526 |
Dergi (dc.relation.journal) | PHYSICA B-CONDENSED MATTER |
Esere Katkı Sağlayan (dc.contributor.other) | Nuray Delen |
Esere Katkı Sağlayan (dc.contributor.other) | Seçkin Altındal Yerişkin |
Esere Katkı Sağlayan (dc.contributor.other) | Arif Özbay |
DOI (dc.identifier.doi) | 10.1016/j.physb.2023.415031 |
Orcid (dc.identifier.orcid) | 0000-0001-9563-4396 |
Bitiş Sayfası (dc.identifier.endpage) | 9 |
Başlangıç Sayfası (dc.identifier.startpage) | 1 |
Dergi Cilt (dc.identifier.volume) | 665 |
wosquality (dc.identifier.wosquality) | Q3 |
wosauthorid (dc.contributor.wosauthorid) | JDL-6784-2023 |
Department (dc.contributor.department) | Elektrik Elektronik |
Wos No (dc.identifier.wos) | WOS:001055544100001 |
Veritabanları (dc.source.platform) | Wos |
Veritabanları (dc.source.platform) | Scopus |