Origin of frequency and voltage dependent negative dielectric properties in the Al/p-Si Schottky diodes with (Cd0.3Zn0.7O) interfacial layer in the wide range of frequency and voltage

İlke Taşçıoğlu

The real and imaginary parts of complex-dielectric (ε′ , ε’’) and electric-modulus (M′ , M′′), dielectric loss tangent (tanδ), and conductivity (σ) values of Al/(Cd0.3Zn0.7O)/p-Si Schottky Diode (SD) were obtained from capacitance/conductance vs. voltage/frequency (C/G-V-f) plots. Negative dielectric (ND) was observed under 50 kHz at about 3.5 V and the increase in the ε’’ results from a drop in ND with increasing voltage, also known as inductive behavior. The rise in σac at high frequencies causes the eddy-current to grow, which in turn causes the ε” or tanδ to increase. While the relaxation ...Daha fazlası